SI2302CDS-T1-E3
Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.1A; Idm: 10A
Manufacturer: VISHAY
Manufacturer part number:
SI2302CDS-T1-E3
TME Symbol:
SI2302CDS-T1-E3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 20V | |
Drain current | 2.1A | |
Pulsed drain current | 10A | |
Power dissipation | 0.86W | |
Case | SOT23 | |
Gate-source voltage | ±8V | |
On-state resistance | 57mΩ | |
Mounting | SMD | |
Gate charge | 3.5nC | |
Kind of channel | enhancement |
Gross weight0.023 g
See other products in this category: SMD N channel transistors VISHAY,
* SI2302CDS-T1-E3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.26 USDGross price for quantities from 3000 pcs - 0.26 USD