SI4288DY-T1-GE3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 7.4A; 3.1W; SO8
Manufacturer: VISHAY
Manufacturer part number:
SI4288DY-T1-GE3
TME Symbol:
SI4288DY-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 40V | |
Drain current | 7.4A | |
Power dissipation | 3.1W | |
Case | SO8 | |
Gate-source voltage | ±20V | |
On-state resistance | 20mΩ | |
Mounting | SMD | |
Gate charge | 4.9nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.158 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SI4288DY-T1-GE3No. of pieces (Multiplicity: 1)
3060 in TME stock
Net price for quantities from 1 pcs - 0.90 USDGross price for quantities from 1 pcs - 0.90 USD
Net price for quantities from 10 pcs - 0.81 USDGross price for quantities from 10 pcs - 0.81 USD
Net price for quantities from 100 pcs - 0.77 USDGross price for quantities from 100 pcs - 0.77 USD
Product available till the stock lasts
Packaging method by the manufacturerReel = 2 500 pcs