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SI7288DP-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A


Manufacturer: VISHAY

Manufacturer part number:
SI7288DP-T1-GE3
TME Symbol:
SI7288DP-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
40V
Drain current
20A
Pulsed drain current
50A
Power dissipation
15.6W
Case
PowerPAK® SO8
Gate-source voltage
±20V
On-state resistance
22mΩ
Mounting
SMD
Gate charge
15nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.158 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
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SI7288DP-T1-GE3
1907 in TME stock
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Net price for quantities from 1 pcs - 2.05 USDGross price for quantities from 1 pcs - 2.05 USD
Net price for quantities from 5 pcs - 1.74 USDGross price for quantities from 5 pcs - 1.74 USD
Net price for quantities from 10 pcs - 1.53 USDGross price for quantities from 10 pcs - 1.53 USD
Net price for quantities from 50 pcs - 1.08 USDGross price for quantities from 50 pcs - 1.08 USD
Net price for quantities from 100 pcs - 0.93 USDGross price for quantities from 100 pcs - 0.93 USD
Net price for quantities from 500 pcs - 0.83 USDGross price for quantities from 500 pcs - 0.83 USD
Packaging method by the manufacturer:Reel = 3 000 pcs