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SIA517DJ-T1-GE3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A


Manufacturer: VISHAY

Manufacturer part number:
SIA517DJ-T1-GE3
TME Symbol:
SIA517DJ-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N/P-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
12/-12V
Drain current
4.5/-4.5A
Power dissipation
6.5W
Case
PowerPAK® SC70
Gate-source voltage
±8V
On-state resistance
170/65mΩ
Mounting
SMD
Gate charge
20/15nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.026 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
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SIA517DJ-T1-GE3
2154 in TME stock
Net price for quantities from 1 pcs - 0.91 USDGross price for quantities from 1 pcs - 0.91 USD
Net price for quantities from 10 pcs - 0.66 USDGross price for quantities from 10 pcs - 0.66 USD
Net price for quantities from 50 pcs - 0.47 USDGross price for quantities from 50 pcs - 0.47 USD
Net price for quantities from 100 pcs - 0.40 USDGross price for quantities from 100 pcs - 0.40 USD
Net price for quantities from 500 pcs - 0.29 USDGross price for quantities from 500 pcs - 0.29 USD
Net price for quantities from 1000 pcs - 0.28 USDGross price for quantities from 1000 pcs - 0.28 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerReel = 3 000 pcs