WNSC2M20120B76J
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 109.2A; Idm: 300A; 789W
Manufacturer: WeEn Semiconductors
Manufacturer part number:
WNSC2M20120B76J
TME Symbol:
WNSC2M20120B76J
Specification
Manufacturer | WeEn Semiconductors | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 109.2A | |
Pulsed drain current | 300A | |
Power dissipation | 789W | |
Case | TO263-7 | |
Gate-source voltage | -4...18V | |
On-state resistance | 27.6mΩ | |
Mounting | SMD | |
Gate charge | 215nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight3 g
Certificates
See other products in this category: SMD N channel transistors WeEn Semiconductors,
* WNSC2M20120B76JNo. of pieces (Multiplicity: 800)
0 in TME stock
Product for special order