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1MBI200U4H-120L-50

Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 62MM


Manufacturer: FUJI

Manufacturer part number:
1MBI200U4H-120L-50
TME Symbol:
1MBI200U4H-120L-50

Specification

Manufacturer
FUJI
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper
Max. off-state voltage
1.2kV
Collector current
200A
Case
62MM
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
400A
Mechanical mounting
screw
Gross weight373.52 g
Certificates
See other products in this category: IGBT modules FUJI,
*
1MBI200U4H-120L-50
0 in TME stock
No. of pieces (Multiplicity: 3)
Minimum order quantity: 3.
Multiplicity: 3.
Product for special order