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AFGB40T65SQDN

Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry

Manufacturer: ONSEMI

Manufacturer part number:
AFGB40T65SQDN
TME Symbol:
AFGB40T65SQDN

Specification

Manufacturer
ONSEMI
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
40A
Power dissipation
119W
Case
D2PAK
Gate-emitter voltage
±20V
Pulsed collector current
160A
Mounting
SMD
Gate charge
76nC
Kind of package
reel, tape
Features of semiconductor devices
integrated anti-parallel diode
Application
automotive industry
Gross weight1 g
Certificates

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AFGB40T65SQDN
0 in TME stock
Net price for quantities from 800 pcs - 3.08 USDGross price for quantities from 800 pcs - 3.08 USD
No. of pieces (Multiplicity: 800)