APT35GP120B2DQ2G
Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max
Manufacturer: MICROCHIP TECHNOLOGY
Manufacturer part number:
APT35GP120B2DQ2G
TME Symbol:
APT35GP120B2DQ2G
Specification
Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | POWER MOS 7®, PT | |
Collector-emitter voltage | 1.2kV | |
Collector current | 46A | |
Power dissipation | 543W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 140A | |
Mounting | THT | |
Gate charge | 150nC | |
Kind of package | tube | |
Turn-on time | 36ns | |
Turn-off time | 0.22µs | |
Features of semiconductor devices | integrated anti-parallel diode |
Gross weight6.835 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
* APT35GP120B2DQ2GNo. of pieces (Multiplicity: 1)
26 in TME stock
Net price for quantities from 1 pcs - 58.80 USDGross price for quantities from 1 pcs - 58.80 USD
Net price for quantities from 3 pcs - 57.41 USDGross price for quantities from 3 pcs - 57.41 USD
Net price for quantities from 10 pcs - 56.40 USDGross price for quantities from 10 pcs - 56.40 USD
Offer available for logged-in customers
Packaging method by the manufacturerTube = 30 pcs