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DG10X12T2

Transistor: IGBT; 1200V; 10A; 96W; TO247

Documentation EN
Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
DG10X12T2
TME Symbol:
DG10X12T2

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
10A
Power dissipation
96W
Case
TO247
Gate-emitter voltage
±20V
Pulsed collector current
30A
Mounting
THT
Gate charge
80nC
Kind of package
tube
Turn-on time
37ns
Turn-off time
493ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6.14 g
Certificates
See other products in this category: THT IGBT transistors STARPOWER SEMICONDUCTOR,
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DG10X12T2
34 in TME stock
Net price for quantities from 1 pcs - 2.57 USDGross price for quantities from 1 pcs - 2.57 USD
Net price for quantities from 3 pcs - 2.30 USDGross price for quantities from 3 pcs - 2.30 USD
Net price for quantities from 10 pcs - 2.03 USDGross price for quantities from 10 pcs - 2.03 USD
Net price for quantities from 30 pcs - 1.84 USDGross price for quantities from 30 pcs - 1.84 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs