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DG50Q12T2

Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS

Documentation EN
Product family

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
DG50Q12T2
TME Symbol:
DG50Q12T2

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
50A
Power dissipation
672W
Case
TO247PLUS
Gate-emitter voltage
±20V
Pulsed collector current
150A
Mounting
THT
Gate charge
0.37µC
Kind of package
tube
Turn-on time
172ns
Turn-off time
338ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6.858 g
Certificates
See other products in this category: THT IGBT transistors STARPOWER SEMICONDUCTOR,
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DG50Q12T2
25 in TME stock
Net price for quantities from 1 pcs - 9.79 USDGross price for quantities from 1 pcs - 9.79 USD
Net price for quantities from 5 pcs - 8.82 USDGross price for quantities from 5 pcs - 8.82 USD
Net price for quantities from 25 pcs - 7.79 USDGross price for quantities from 25 pcs - 7.79 USD
Net price for quantities from 100 pcs - 7.00 USDGross price for quantities from 100 pcs - 7.00 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs