F4150R12KS4BOSA1
Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Manufacturer: INFINEON TECHNOLOGIES
Manufacturer part number:
F4150R12KS4BOSA1
TME Symbol:
F4150R12KS4BOSA1
Specification
Manufacturer | INFINEON TECHNOLOGIES | |
Type of semiconductor module | IGBT | |
Semiconductor structure | transistor/transistor | |
Topology | IGBT half-bridge x2, NTC thermistor | |
Max. off-state voltage | 1.2kV | |
Collector current | 150A | |
Case | AG-ECONO3-4 | |
Electrical mounting | Press-in PCB | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 300A | |
Power dissipation | 960W | |
Technology | EconoPACK™ 3 | |
Mechanical mounting | screw |
Gross weight303.5 g
Certificates
See other products in this category: IGBT modules INFINEON TECHNOLOGIES,
* F4150R12KS4BOSA1No. of pieces (Multiplicity: 1)
5 in TME stock
Net price for quantities from 1 pcs - 191.82 USDGross price for quantities from 1 pcs - 191.82 USD
Net price for quantities from 3 pcs - 172.17 USDGross price for quantities from 3 pcs - 172.17 USD
Net price for quantities from 10 pcs - 160.62 USDGross price for quantities from 10 pcs - 160.62 USD
Packaging method by the manufacturerCardboard = 10 pcs