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FGA60N65SMD

Transistor: IGBT; 650V; 60A; 300W; TO3PN

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FGA60N65SMD
TME Symbol:
FGA60N65SMD

Specification

Manufacturer
ONSEMI
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
60A
Power dissipation
300W
Case
TO3PN
Gate-emitter voltage
±20V
Pulsed collector current
180A
Mounting
THT
Gate charge
284nC
Kind of package
tube
Features of semiconductor devices
integrated anti-parallel diode
Gross weight5.264 g
Certificates
See other products in this category: THT IGBT transistors ONSEMI,
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FGA60N65SMD
96 in TME stock
Net price for quantities from 1 pcs - 5.61 USDGross price for quantities from 1 pcs - 5.61 USD
Net price for quantities from 3 pcs - 5.09 USDGross price for quantities from 3 pcs - 5.09 USD
Net price for quantities from 10 pcs - 4.32 USDGross price for quantities from 10 pcs - 4.32 USD
Net price for quantities from 30 pcs - 3.65 USDGross price for quantities from 30 pcs - 3.65 USD
Net price for quantities from 60 pcs - 3.52 USDGross price for quantities from 60 pcs - 3.52 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs