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FGY60T120SQDN

Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3

Product family

Manufacturer: ONSEMI

Manufacturer part number:
FGY60T120SQDN
TME Symbol:
FGY60T120SQDN

Specification

Manufacturer
ONSEMI
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
60A
Power dissipation
259W
Case
TO247-3
Gate-emitter voltage
±25V
Pulsed collector current
240A
Mounting
THT
Gate charge
311nC
Kind of package
tube
Gross weight6.47 g
Certificates
See other products in this category: THT IGBT transistors ONSEMI,
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FGY60T120SQDN
0 in TME stock
Net price for quantities from 1 pcs - 8.96 USDGross price for quantities from 1 pcs - 8.96 USD
Net price for quantities from 10 pcs - 8.39 USDGross price for quantities from 10 pcs - 8.39 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs