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FGY75T120SQDN

Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3

Manufacturer: ONSEMI

Manufacturer part number:
FGY75T120SQDN
TME Symbol:
FGY75T120SQDN

Specification

Manufacturer
ONSEMI
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
75A
Power dissipation
395W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
300A
Mounting
THT
Gate charge
399nC
Kind of package
tube
Gross weight6.54 g
Certificates
See other products in this category: THT IGBT transistors ONSEMI,
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FGY75T120SQDN
13 in TME stock
Net price for quantities from 1 pcs - 9.86 USDGross price for quantities from 1 pcs - 9.86 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs