G2R1000MT33J
Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 4A; Idm: 8A; 74W; TO263-7
Manufacturer: GeneSiC SEMICONDUCTOR
Manufacturer part number:
G2R1000MT33J
TME Symbol:
G2R1000MT33J
Specification
Manufacturer | GeneSiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | G2R™, SiC | |
Polarisation | unipolar | |
Drain-source voltage | 3.3kV | |
Drain current | 4A | |
Pulsed drain current | 8A | |
Power dissipation | 74W | |
Case | TO263-7 | |
Gate-source voltage | -5...20V | |
On-state resistance | 1Ω | |
Mounting | SMD | |
Gate charge | 21nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1.45 g
Certificates
See other products in this category: SMD N channel transistors GeneSiC SEMICONDUCTOR,
* G2R1000MT33JNo. of pieces (Multiplicity: 1 000)
0 in TME stock
Product for special order