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G3R160MT12D

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W

Manufacturer: GeneSiC SEMICONDUCTOR

Manufacturer part number:
G3R160MT12D
TME Symbol:
G3R160MT12D

Specification

Manufacturer
GeneSiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
G3R™, SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
16A
Pulsed drain current
40A
Power dissipation
123W
Case
TO247-3
Gate-source voltage
-5...15V
On-state resistance
0.16Ω
Mounting
THT
Gate charge
28nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.21 g
Certificates
See other products in this category: THT N channel transistors GeneSiC SEMICONDUCTOR,
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G3R160MT12D
808 in TME stock
Net price for quantities from 1 pcs - 6.40 USDGross price for quantities from 1 pcs - 6.40 USD
Net price for quantities from 3 pcs - 5.92 USDGross price for quantities from 3 pcs - 5.92 USD
Net price for quantities from 30 pcs - 5.40 USDGross price for quantities from 30 pcs - 5.40 USD
Net price for quantities from 510 pcs - 5.18 USDGross price for quantities from 510 pcs - 5.18 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs