G3R30MT12J
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Manufacturer: GeneSiC SEMICONDUCTOR
Manufacturer part number:
G3R30MT12J
TME Symbol:
G3R30MT12J
Specification
Manufacturer | GeneSiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | G3R™, SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 68A | |
Pulsed drain current | 200A | |
Power dissipation | 459W | |
Case | TO263-7 | |
Gate-source voltage | -5...15V | |
On-state resistance | 30mΩ | |
Mounting | SMD | |
Gate charge | 155nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1.45 g
Certificates
See other products in this category: SMD N channel transistors GeneSiC SEMICONDUCTOR,
* G3R30MT12JNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 23.50 USDGross price for quantities from 1 pcs - 23.50 USD
Net price for quantities from 5 pcs - 21.31 USDGross price for quantities from 5 pcs - 21.31 USD
Net price for quantities from 25 pcs - 20.40 USDGross price for quantities from 25 pcs - 20.40 USD