G3R350MT12D
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Manufacturer: GeneSiC SEMICONDUCTOR
Manufacturer part number:
G3R350MT12D
TME Symbol:
G3R350MT12D
Specification
Manufacturer | GeneSiC SEMICONDUCTOR | |
Type of transistor | N-MOSFET | |
Technology | G3R™, SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 8A | |
Pulsed drain current | 16A | |
Power dissipation | 74W | |
Case | TO247-3 | |
Gate-source voltage | -5...15V | |
On-state resistance | 0.35Ω | |
Mounting | THT | |
Gate charge | 12nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Gross weight6.21 g
Certificates
See other products in this category: THT N channel transistors GeneSiC SEMICONDUCTOR,
* G3R350MT12DNo. of pieces (Multiplicity: 1)
226 in TME stock
Net price for quantities from 1 pcs - 3.77 USDGross price for quantities from 1 pcs - 3.77 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs