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G3R75MT12D

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W

Manufacturer: GeneSiC SEMICONDUCTOR

Manufacturer part number:
G3R75MT12D
TME Symbol:
G3R75MT12D

Specification

Manufacturer
GeneSiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
G3R™, SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
29A
Pulsed drain current
80A
Power dissipation
207W
Case
TO247-3
Gate-source voltage
-5...15V
On-state resistance
75mΩ
Mounting
THT
Gate charge
54nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.07 g
Certificates
See other products in this category: THT N channel transistors GeneSiC SEMICONDUCTOR,
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G3R75MT12D
4 in TME stock
Net price for quantities from 1 pcs - 12.20 USDGross price for quantities from 1 pcs - 12.20 USD
Net price for quantities from 10 pcs - 10.81 USDGross price for quantities from 10 pcs - 10.81 USD
Net price for quantities from 30 pcs - 9.98 USDGross price for quantities from 30 pcs - 9.98 USD
Net price for quantities from 120 pcs - 9.35 USDGross price for quantities from 120 pcs - 9.35 USD
No. of pieces (Multiplicity: 1)
After the stocks are exhausted, the minimum quantity will change
Packaging method by the manufacturerTube = 30 pcs