IXA20PG1200DHGLB
Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Manufacturer: IXYS
Manufacturer part number:
IXA20PG1200DHGLB
TME Symbol:
IXA20PG1200DHGLB
Specification
Manufacturer | IXYS | ||
Type of semiconductor module | IGBT | ||
Semiconductor structure | diode/transistor | ||
Topology | IGBT half-bridge | ||
Max. off-state voltage | 1.2kV | ||
Collector current | 23A | ||
Case | SMPD-B | ||
Electrical mounting | SMT | ||
Gate-emitter voltage | ±20V | ||
Pulsed collector current | 45A | ||
Power dissipation | 130W | ||
Technology | ISOPLUS™, Sonic FRD™ |
Gross weight7.983 g
Certificates
See other products in this category: IGBT modules IXYS,
* IXA20PG1200DHGLBNo. of pieces (Multiplicity: 1)
22 in TME stock
Net price for quantities from 1 pcs - 9.61 USDGross price for quantities from 1 pcs - 9.61 USD
Net price for quantities from 3 pcs - 8.43 USDGross price for quantities from 3 pcs - 8.43 USD
Net price for quantities from 10 pcs - 8.07 USDGross price for quantities from 10 pcs - 8.07 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 20 pcs