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IXA30RG1200DHGLB

Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT

Manufacturer: IXYS

Manufacturer part number:
IXA30RG1200DHGLB
TME Symbol:
IXA30RG1200DHGLB

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper
Max. off-state voltage
1.2kV
Collector current
30A
Case
SMPD-B
Electrical mounting
SMT
Gate-emitter voltage
±20V
Pulsed collector current
75A
Power dissipation
147W
Technology
ISOPLUS™, Sonic FRD™
Gross weight7.95 g
Certificates
See other products in this category: IGBT modules IXYS,
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IXA30RG1200DHGLB
39 in TME stock
Net price for quantities from 1 pcs - 6.07 USDGross price for quantities from 1 pcs - 6.07 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 20 pcs