IXBT10N170
Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXBT10N170
TME Symbol:
IXBT10N170
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 1.7kV | |
Collector current | 10A | |
Power dissipation | 140W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 40A | |
Mounting | SMD | |
Gate charge | 30nC | |
Kind of package | tube | |
Turn-on time | 63ns | |
Turn-off time | 1.8µs | |
Features of semiconductor devices | high voltage |
Gross weight4 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
* IXBT10N170No. of pieces (Multiplicity: 1)
27 in TME stock
Net price for quantities from 1 pcs - 8.65 USDGross price for quantities from 1 pcs - 8.65 USD
Net price for quantities from 3 pcs - 7.77 USDGross price for quantities from 3 pcs - 7.77 USD
Net price for quantities from 10 pcs - 7.25 USDGross price for quantities from 10 pcs - 7.25 USD
Net price for quantities from 30 pcs - 7.00 USDGross price for quantities from 30 pcs - 7.00 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs