IXBT16N170A
Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXBT16N170A
TME Symbol:
IXBT16N170A
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 1.7kV | |
Collector current | 10A | |
Power dissipation | 150W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 40A | |
Mounting | SMD | |
Gate charge | 65nC | |
Kind of package | tube | |
Turn-on time | 43ns | |
Turn-off time | 370ns | |
Features of semiconductor devices | high voltage |
Gross weight4.015 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
* IXBT16N170ANo. of pieces (Multiplicity: 1)
7 in TME stock
Net price for quantities from 1 pcs - 14.64 USDGross price for quantities from 1 pcs - 14.64 USD
Net price for quantities from 3 pcs - 12.86 USDGross price for quantities from 3 pcs - 12.86 USD
Net price for quantities from 10 pcs - 11.55 USDGross price for quantities from 10 pcs - 11.55 USD
Net price for quantities from 30 pcs - 11.54 USDGross price for quantities from 30 pcs - 11.54 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs