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Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 3kV | |
Collector current | 42A | |
Power dissipation | 500W | |
Case | TO268HV | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 400A | |
Mounting | SMD | |
Gate charge | 200nC | |
Kind of package | tube | |
Turn-on time | 652ns | |
Turn-off time | 950ns | |
Features of semiconductor devices | high voltage |