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IXBT42N300HV

Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV

Manufacturer: IXYS

Manufacturer part number:
IXBT42N300HV
TME Symbol:
IXBT42N300HV

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
3kV
Collector current
42A
Power dissipation
500W
Case
TO268HV
Gate-emitter voltage
±20V
Pulsed collector current
400A
Mounting
SMD
Gate charge
200nC
Kind of package
tube
Turn-on time
652ns
Turn-off time
950ns
Features of semiconductor devices
high voltage
Gross weight3.967 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXBT42N300HV
0 in TME stock
Net price for quantities from 1 pcs - 55.07 USDGross price for quantities from 1 pcs - 55.07 USD
Net price for quantities from 30 pcs - 51.28 USDGross price for quantities from 30 pcs - 51.28 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs