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IXBT6N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK

Manufacturer: IXYS

Manufacturer part number:
IXBT6N170
TME Symbol:
IXBT6N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™, FRED
Collector-emitter voltage
1.7kV
Collector current
6A
Power dissipation
75W
Case
D3PAK
Gate-emitter voltage
±20V
Pulsed collector current
36A
Mounting
SMD
Gate charge
17nC
Kind of package
tube
Turn-on time
104ns
Turn-off time
700ns
Features of semiconductor devices
high voltage
Gross weight3.98 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXBT6N170
30 in TME stock
Net price for quantities from 1 pcs - 15.83 USDGross price for quantities from 1 pcs - 15.83 USD
Net price for quantities from 3 pcs - 12.00 USDGross price for quantities from 3 pcs - 12.00 USD
Net price for quantities from 10 pcs - 11.05 USDGross price for quantities from 10 pcs - 11.05 USD
Net price for quantities from 15 pcs - 10.79 USDGross price for quantities from 15 pcs - 10.79 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs