IXBX75N170A
Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
Manufacturer: IXYS
Manufacturer part number:
IXBX75N170A
TME Symbol:
IXBX75N170A
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 1.7kV | |
Collector current | 65A | |
Power dissipation | 1.04kW | |
Case | PLUS247™ | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 300A | |
Mounting | THT | |
Gate charge | 358nC | |
Kind of package | tube | |
Turn-on time | 65ns | |
Turn-off time | 595ns | |
Features of semiconductor devices | high voltage |
Gross weight6.778 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
* IXBX75N170ANo. of pieces (Multiplicity: 1)
7 in TME stock
Net price for quantities from 1 pcs - 27.61 USDGross price for quantities from 1 pcs - 27.61 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs