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IXDH20N120

Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3

Manufacturer: IXYS

Manufacturer part number:
IXDH20N120
TME Symbol:
IXDH20N120

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
NPT
Collector-emitter voltage
1.2kV
Collector current
25A
Power dissipation
200W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
50A
Mounting
THT
Gate charge
70nC
Kind of package
tube
Turn-on time
175ns
Turn-off time
570ns
Gross weight6.095 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXDH20N120
186 in TME stock
Net price for quantities from 1 pcs - 7.33 USDGross price for quantities from 1 pcs - 7.33 USD
Net price for quantities from 3 pcs - 6.60 USDGross price for quantities from 3 pcs - 6.60 USD
Net price for quantities from 10 pcs - 5.84 USDGross price for quantities from 10 pcs - 5.84 USD
Net price for quantities from 30 pcs - 5.24 USDGross price for quantities from 30 pcs - 5.24 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs