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IXGA30N120B3-TRL

Transistor: IGBT; 1.2kV; 60A; 300W; D2PAK

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Manufacturer: IXYS

Manufacturer part number:
IXGA30N120B3-TRL
TME Symbol:
IXGA30N120B3-TRL

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
60A
Power dissipation
300W
Case
D2PAK
Gate-emitter voltage
±20V
Pulsed collector current
150A
Mounting
SMD
Gate charge
87nC
Kind of package
reel, tape
Gross weight1 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXGA30N120B3-TRL
0 in TME stock
Net price for quantities from 800 pcs - 6.30 USDGross price for quantities from 800 pcs - 6.30 USD
No. of pieces (Multiplicity: 800)
Minimum order quantity: 800.
Multiplicity: 800.