IXGT30N120B3D1
Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXGT30N120B3D1
TME Symbol:
IXGT30N120B3D1
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | GenX3™, PT | |
Collector-emitter voltage | 1.2kV | |
Collector current | 30A | |
Power dissipation | 300W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 150A | |
Mounting | SMD | |
Gate charge | 87nC | |
Kind of package | tube | |
Turn-on time | 56ns | |
Turn-off time | 471ns |
Gross weight5 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
* IXGT30N120B3D1No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 12.03 USDGross price for quantities from 1 pcs - 12.03 USD
Net price for quantities from 3 pcs - 11.01 USDGross price for quantities from 3 pcs - 11.01 USD
Net price for quantities from 10 pcs - 9.25 USDGross price for quantities from 10 pcs - 9.25 USD
Net price for quantities from 30 pcs - 8.38 USDGross price for quantities from 30 pcs - 8.38 USD