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IXGT32N170

Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268

Manufacturer: IXYS

Manufacturer part number:
IXGT32N170
TME Symbol:
IXGT32N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
NPT
Collector-emitter voltage
1.7kV
Collector current
32A
Power dissipation
350W
Case
TO268
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
SMD
Gate charge
155nC
Kind of package
reel, tape
Turn-on time
90ns
Turn-off time
920ns
Features of semiconductor devices
high voltage
Gross weight5 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXGT32N170
0 in TME stock
Net price for quantities from 1 pcs - 29.05 USDGross price for quantities from 1 pcs - 29.05 USD
Net price for quantities from 10 pcs - 23.30 USDGross price for quantities from 10 pcs - 23.30 USD
Net price for quantities from 30 pcs - 18.93 USDGross price for quantities from 30 pcs - 18.93 USD
No. of pieces (Multiplicity: 1)