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IXGT60N60C3D1

Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXGT60N60C3D1
TME Symbol:
IXGT60N60C3D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, PT
Collector-emitter voltage
600V
Collector current
60A
Power dissipation
380W
Case
TO268
Gate-emitter voltage
±20V
Pulsed collector current
300A
Mounting
SMD
Gate charge
115nC
Kind of package
tube
Turn-on time
54ns
Turn-off time
198ns
Gross weight4.02 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXGT60N60C3D1
13 in TME stock
Net price for quantities from 1 pcs - 6.94 USDGross price for quantities from 1 pcs - 6.94 USD
Net price for quantities from 3 pcs - 6.13 USDGross price for quantities from 3 pcs - 6.13 USD
Net price for quantities from 10 pcs - 5.51 USDGross price for quantities from 10 pcs - 5.51 USD
Net price for quantities from 30 pcs - 5.15 USDGross price for quantities from 30 pcs - 5.15 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs