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IXXH30N60B3

Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD

Manufacturer: IXYS

Manufacturer part number:
IXXH30N60B3
TME Symbol:
IXXH30N60B3

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
600V
Collector current
30A
Power dissipation
270W
Case
TO247AD
Gate-emitter voltage
±20V
Pulsed collector current
115A
Mounting
THT
Gate charge
39nC
Kind of package
tube
Turn-on time
23ns
Turn-off time
125ns
Gross weight6.11 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXXH30N60B3
224 in TME stock
Net price for quantities from 1 pcs - 6.69 USDGross price for quantities from 1 pcs - 6.69 USD
Net price for quantities from 3 pcs - 6.02 USDGross price for quantities from 3 pcs - 6.02 USD
Net price for quantities from 10 pcs - 5.32 USDGross price for quantities from 10 pcs - 5.32 USD
Net price for quantities from 30 pcs - 4.78 USDGross price for quantities from 30 pcs - 4.78 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs