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IXXH60N65B4H1

Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3


Manufacturer: IXYS

Manufacturer part number:
IXXH60N65B4H1
TME Symbol:
IXXH60N65B4H1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX4™, Trench, XPT™
Collector-emitter voltage
650V
Collector current
60A
Power dissipation
536W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
265A
Mounting
THT
Gate charge
86nC
Kind of package
tube
Turn-on time
94ns
Turn-off time
208ns
Gross weight6.08 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXXH60N65B4H1
268 in TME stock
Net price for quantities from 1 pcs - 12.24 USDGross price for quantities from 1 pcs - 12.24 USD
Net price for quantities from 3 pcs - 11.50 USDGross price for quantities from 3 pcs - 11.50 USD
Net price for quantities from 30 pcs - 10.14 USDGross price for quantities from 30 pcs - 10.14 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs