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IXYA20N120A4HV

Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK

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Manufacturer: IXYS

Manufacturer part number:
IXYA20N120A4HV
TME Symbol:
IXYA20N120A4HV

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
80A
Power dissipation
375W
Case
D2PAK
Gate-emitter voltage
±20V
Pulsed collector current
135A
Mounting
SMD
Gate charge
46nC
Kind of package
tube
Gross weight1 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXYA20N120A4HV
0 in TME stock
Net price for quantities from 300 pcs - 3.46 USDGross price for quantities from 300 pcs - 3.46 USD
No. of pieces (Multiplicity: 300)
Minimum order quantity: 300.
Multiplicity: 300.