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IXYA20N65C3D1

Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263

Manufacturer: IXYS

Manufacturer part number:
IXYA20N65C3D1
TME Symbol:
IXYA20N65C3D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
650V
Collector current
20A
Power dissipation
200W
Case
TO263
Gate-emitter voltage
±20V
Pulsed collector current
105A
Mounting
SMD
Gate charge
30nC
Kind of package
tube
Turn-on time
51ns
Turn-off time
132ns
Gross weight1.496 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXYA20N65C3D1
129 in TME stock
Net price for quantities from 1 pcs - 3.33 USDGross price for quantities from 1 pcs - 3.33 USD
Net price for quantities from 3 pcs - 2.99 USDGross price for quantities from 3 pcs - 2.99 USD
Net price for quantities from 10 pcs - 2.64 USDGross price for quantities from 10 pcs - 2.64 USD
Net price for quantities from 50 pcs - 2.38 USDGross price for quantities from 50 pcs - 2.38 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 50 pcs