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IXYH20N120C3D1

Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3


Manufacturer: IXYS

Manufacturer part number:
IXYH20N120C3D1
TME Symbol:
IXYH20N120C3D1

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, XPT™
Collector-emitter voltage
1.2kV
Collector current
20A
Power dissipation
230W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
88A
Mounting
THT
Gate charge
53nC
Kind of package
tube
Turn-on time
60ns
Turn-off time
0.22µs
Gross weight6.077 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXYH20N120C3D1
228 in TME stock
Net price for quantities from 1 pcs - 9.36 USDGross price for quantities from 1 pcs - 9.36 USD
Net price for quantities from 3 pcs - 8.44 USDGross price for quantities from 3 pcs - 8.44 USD
Net price for quantities from 10 pcs - 8.01 USDGross price for quantities from 10 pcs - 8.01 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs