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Manufacturer	IXYS
Type of semiconductor module	IGBT
Semiconductor structure	single transistor
Max. off-state voltage	1.2kV
Collector current	66A
Case	SOT227B
Electrical mounting	screw
Gate-emitter voltage	±20V
Pulsed collector current	320A
Power dissipation	500W
Technology	GenX3™, XPT™
Mechanical mounting	screw

IXYN82N120C3H1

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B

Specification