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IXYT85N120A4HV

Transistor: IGBT; 1.2kV; 300A; 1.15kW; TO268HV

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Manufacturer: IXYS

Manufacturer part number:
IXYT85N120A4HV
TME Symbol:
IXYT85N120A4HV

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Collector-emitter voltage
1.2kV
Collector current
300A
Power dissipation
1.15kW
Case
TO268HV
Gate-emitter voltage
±20V
Pulsed collector current
520A
Mounting
SMD
Gate charge
200nC
Kind of package
tube
Turn-off time
0.4µs
Gross weight1 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
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IXYT85N120A4HV
0 in TME stock
Net price for quantities from 300 pcs - 17.01 USDGross price for quantities from 300 pcs - 17.01 USD
No. of pieces (Multiplicity: 300)
Minimum order quantity: 300.
Multiplicity: 300.