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IXYX100N120B3

Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™

Manufacturer: IXYS

Manufacturer part number:
IXYX100N120B3
TME Symbol:
IXYX100N120B3

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
1.2kV
Collector current
100A
Power dissipation
1.15kW
Case
PLUS247™
Gate-emitter voltage
±20V
Pulsed collector current
530A
Mounting
THT
Gate charge
250nC
Kind of package
tube
Turn-on time
125ns
Turn-off time
450ns
Gross weight6 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXYX100N120B3
0 in TME stock
Net price for quantities from 1 pcs - 20.47 USDGross price for quantities from 1 pcs - 20.47 USD
Net price for quantities from 10 pcs - 19.18 USDGross price for quantities from 10 pcs - 19.18 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.