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NXH800H120L7QDSG

Module: IGBT; diode/transistor; IGBT half-bridge,NTC thermistor

Manufacturer: ONSEMI

Manufacturer part number:
NXH800H120L7QDSG
TME Symbol:
NXH800H120L7QDSG

Specification

Manufacturer
ONSEMI
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
IGBT half-bridge, NTC thermistor
Max. off-state voltage
1.2kV
Collector current
800A
Case
PIM11
Application
for UPS, Inverter
Gate-emitter voltage
±20V
Pulsed collector current
1.6kA
Technology
SiC
Mechanical mounting
screw
Gross weight100 g
Certificates
See other products in this category: IGBT modules ONSEMI,
*
NXH800H120L7QDSG
0 in TME stock
Net price for quantities from 24 pcs - 242.46 USDGross price for quantities from 24 pcs - 242.46 USD
No. of pieces (Multiplicity: 24)