VS-GT300YH120N
Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench
Manufacturer: VISHAY
Manufacturer part number:
VS-GT300YH120N
TME Symbol:
VS-GT300YH120N
Specification
Manufacturer | VISHAY | |
Type of semiconductor module | IGBT | |
Semiconductor structure | diode/transistor | |
Topology | MOSFET half-bridge + serial diodes | |
Max. off-state voltage | 1.2kV | |
Collector current | 300A | |
Case | Dual INT-A-Pak | |
Electrical mounting | FASTON connectors, screw | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 720A | |
Technology | Trench | |
Mechanical mounting | screw |
Gross weight300 g
Certificates
See other products in this category: IGBT modules VISHAY,
* VS-GT300YH120NNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 224.75 USDGross price for quantities from 1 pcs - 224.75 USD
Net price for quantities from 12 pcs - 205.92 USDGross price for quantities from 12 pcs - 205.92 USD