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Manufacturer | MICROCHIP TECHNOLOGY | |
Type of transistor | IGBT | |
Technology | POWER MOS 8®, PT | |
Collector-emitter voltage | 600V | |
Collector current | 102A | |
Power dissipation | 780W | |
Case | T-Max | |
Gate-emitter voltage | ±30V | |
Pulsed collector current | 307A | |
Mounting | THT | |
Gate charge | 294nC | |
Kind of package | tube | |
Turn-on time | 64ns | |
Turn-off time | 389ns |