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APT35GP120B2D2G

Transistor: IGBT; PT; 1.2kV; 46A; 543W; T-Max

Manufacturer: MICROCHIP TECHNOLOGY

Manufacturer part number:
APT35GP120B2D2G
TME Symbol:
APT35GP120B2D2G

Specification

Manufacturer
MICROCHIP TECHNOLOGY
Type of transistor
IGBT
Technology
POWER MOS 7®, PT
Collector-emitter voltage
1.2kV
Collector current
46A
Power dissipation
543W
Case
T-Max
Gate-emitter voltage
±30V
Pulsed collector current
140A
Mounting
THT
Gate charge
150nC
Kind of package
tube
Turn-on time
36ns
Turn-off time
0.22µs
Features of semiconductor devices
integrated anti-parallel diode
Gross weight6 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
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APT35GP120B2D2G
0 in TME stock
Net price for quantities from 1 pcs - 27.93 USDGross price for quantities from 1 pcs - 27.93 USD
Net price for quantities from 3 pcs - 25.14 USDGross price for quantities from 3 pcs - 25.14 USD
Net price for quantities from 10 pcs - 22.23 USDGross price for quantities from 10 pcs - 22.23 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs