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APT40GR120B2D30

Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max

Manufacturer: MICROCHIP TECHNOLOGY

Manufacturer part number:
APT40GR120B2D30
TME Symbol:
APT40GR120B2D30

Specification

Manufacturer
MICROCHIP TECHNOLOGY
Type of transistor
IGBT
Technology
NPT, POWER MOS 8®
Collector-emitter voltage
1.2kV
Collector current
40A
Power dissipation
500W
Case
T-Max
Gate-emitter voltage
±30V
Pulsed collector current
160A
Mounting
THT
Gate charge
0.21µC
Kind of package
tube
Turn-on time
47ns
Turn-off time
232ns
Features of semiconductor devices
integrated anti-parallel diode
Part status
Not recommended for new designs
Gross weight6.76 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT IGBT transistors MICROCHIP TECHNOLOGY,
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APT40GR120B2D30
60 in TME stock
Net price for quantities from 1 pcs - 27.40 USDGross price for quantities from 1 pcs - 27.40 USD
Net price for quantities from 3 pcs - 24.51 USDGross price for quantities from 3 pcs - 24.51 USD
Net price for quantities from 10 pcs - 21.61 USDGross price for quantities from 10 pcs - 21.61 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs