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Manufacturer	MICROCHIP TECHNOLOGY
Type of transistor	IGBT
Technology	POWER MOS 7®, PT
Collector-emitter voltage	600V
Collector current	100A
Power dissipation	1041W
Case	T-Max
Gate-emitter voltage	±20V
Pulsed collector current	330A
Mounting	THT
Gate charge	280nC
Kind of package	tube
Turn-on time	69ns
Turn-off time	233ns

APT80GP60B2G

Transistor: IGBT; PT; 600V; 100A; 1041W; T-Max

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand