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B1M080120HC

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W

Manufacturer: BASiC SEMICONDUCTOR

Manufacturer part number:
B1M080120HC
TME Symbol:
B1M080120HC

Specification

Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
27A
Pulsed drain current
80A
Power dissipation
241W
Case
TO247-3
Gate-source voltage
-5...20V
On-state resistance
80mΩ
Mounting
THT
Gate charge
149nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.26 g
Certificates

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand

WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
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B1M080120HC
36 in TME stock
Net price for quantities from 1 pcs - 23.11 USDGross price for quantities from 1 pcs - 23.11 USD
Net price for quantities from 5 pcs - 20.80 USDGross price for quantities from 5 pcs - 20.80 USD
Net price for quantities from 30 pcs - 18.38 USDGross price for quantities from 30 pcs - 18.38 USD
Net price for quantities from 150 pcs - 15.49 USDGross price for quantities from 150 pcs - 15.49 USD
Net price for quantities from 600 pcs - 14.80 USDGross price for quantities from 600 pcs - 14.80 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs