B2M035120YP
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Manufacturer: BASiC SEMICONDUCTOR
Manufacturer part number:
B2M035120YP
TME Symbol:
B2M035120YP
Specification
Manufacturer | BASiC SEMICONDUCTOR | ||
Type of transistor | N-MOSFET | ||
Technology | SiC | ||
Polarisation | unipolar | ||
Drain-source voltage | 1.2kV | ||
Drain current | 60A | ||
Pulsed drain current | 190A | ||
Power dissipation | 375W | ||
Case | TO247PLUS-4 | ||
Gate-source voltage | -4...18V | ||
On-state resistance | 35mΩ | ||
Mounting | THT | ||
Gate charge | 115nC | ||
Kind of package | tube | ||
Kind of channel | enhancement | ||
Features of semiconductor devices | Kelvin terminal |
Gross weight7.215 g
Certificates
Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors BASiC SEMICONDUCTOR,
* B2M035120YPNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 17.60 USDGross price for quantities from 1 pcs - 17.60 USD
Net price for quantities from 3 pcs - 15.90 USDGross price for quantities from 3 pcs - 15.90 USD
Net price for quantities from 10 pcs - 14.00 USDGross price for quantities from 10 pcs - 14.00 USD
Net price for quantities from 30 pcs - 12.60 USDGross price for quantities from 30 pcs - 12.60 USD
Hardly available product
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs