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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	48A
Pulsed drain current	123A
Power dissipation	333W
Case	TO247-3
Gate-source voltage	-4...18V
On-state resistance	40mΩ
Mounting	THT
Gate charge	90nC
Kind of package	tube
Kind of channel	enhancement

B2M040120H

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 48A; Idm: 123A; 333W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand