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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	127A
Pulsed drain current	360A
Power dissipation	750W
Case	TO247-4
Gate-source voltage	-5...18V
On-state resistance	13.5mΩ
Mounting	THT
Gate charge	225nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

B3M013C120Z

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 127A; Idm: 360A; 750W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand