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Manufacturer	BASiC SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	78A
Pulsed drain current	171A
Power dissipation	394W
Case	TO247-4
Gate-source voltage	-5...18V
On-state resistance	25mΩ
Mounting	THT
Gate charge	98nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

B3M025065Z

Transistor: N-MOSFET; SiC; unipolar; 650V; 78A; Idm: 171A; 394W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand